Summary of the technology
A new technology to obtain ultra thin crystalline Silicon layers has been developed and patented. This innovative method allows to manufacture controllable thin film thickness using only a single step. Partners to further develop the system and/or to establish commercial agreements along with technical cooperation are sought.
Crystalline Silicon is of great importance in modern society since it has a variety of applications in the fields of electronics and photovoltaics, among others. Current methods for producing silicon wafers are not able to reduce the thickness below 100μm. To obtain thinner layers, various methods have been proposed but they are still under development.
Present available technologies only allows the fabrication of a single layer. There is therefore a need to provide an improved process for obtaining thin layers of crystalline silicon be able to obtain a higher number of layers by applying a single manufacturing process starting with a single wafer.
The presents technology allows to obtain, from a single Silicon wafer and in a single fabrication step, a stack of multiple thin films of crystalline Silicon with controllable thickness, in the range of ultra-thin layers (10 thin films of crystalline Silicon has been accomplished in 3 cm 2 samples. Larger number of films is easily achievable. The extension of the presented technology up to 2 inches surface is ongoing.
Applications and Target Market
This technology could be of interest to Silicon producers and wafer manufacturer.
3D integrated electronics. Low cost c-Silicon Solar Cells
Low cost fabrication.
Single step. Not necessary to repeat everything from the very beginning to obtain a second layer.
Thin film thickness controllable.
Number of layers controllable.
Intellectual property status
Technology available for licensing with technical cooperation Patent Status Priority application
Universitat Politècnica de Catalunya - UPC
Technology Transfer Office