Benemérita Universidad Autónoma de Puebla

SUPERFICIAL DEVICE FOR EMITTING ELECTRONS FROM AN ARRANGEMENT OF SILICON CARBIDE BARRIERS.

Posted by Benemérita Universidad Autónoma de PueblaResponsive · Patents for licensing · Mexico

Summary of the technology

The present invention is related to a superficial emitter of electrons which emits electrons from a micrometric Graphene arrangement over silicon carbide. The emitter consists in a plurality of SiC barriers which are highly close and similar and which axes are parallel therebetween, formed by self-alignment with an equidistant separation. The operation of the device at low voltage is useful for obtaining an efficient emission, which results from the quantic mechanical tunneling between the barriers of the electrons injected from the cathode contact.

Benemérita Universidad Autónoma de Puebla
Benemérita Universidad Autónoma de Puebla

Description of the technology

Intellectual property status

Technology Owner

Benemérita Universidad Autónoma de Puebla

Technology Transfer Office

Related keywords

  • Electronics Related Market
  • Electronic Components
  • Standart semiconductors
  • Electronics Related Equipment
  • Fibre Optics

About Benemérita Universidad Autónoma de Puebla

Technology Transfer Office from Mexico

Public University with 527 full time teachers, recognized by the national system of researchers (S.N.I.), with a large contribution from documents of scientific divulgation in diverse areas of knowledge and presentation of patent documents, which occupies the third place in the ranking of universities in Mexico with the largest number of patent applications

Send your request

By clicking "Send your request" you are signing up and accepting our Terms of Service and Privacy policy

Technology Offers on Innoget are directly posted and managed by its members as well as evaluation of requests for information. Innoget is the trusted open innovation and science network aimed at directly connect industry needs with professionals online.