Currently, magnetic random access memories (MRAMs) use a magnetic field to control corresponding magnetic states. Such systems are comparatively bulkier and are associated with high-power consumption. With ever changing life-style; the demand for faster, smaller and ultra-low power memory systems is significantly increasing. This approach allows for the development and use of a novel electric field (E-Field) controllable MRAMs based on multi-ferroics.
Value Proposition
The E-Field MRAM:
•Is highly compact, light weight and faster as compared to conventional MRAMs.
•Involves the use of a strong magneto-electric coupling to enable electric field induced magnetic switching
•Allows for a high power efficient (ultra-low power) electric control of anisotropic magneto-resistance (AMR) and giant magneto-resistance (GMR) as compared to a magnetic control observed with conventional memory systems
•Would be commercially useful as new memory means for computers, cell phones, etc.
Intellectual Property status
Provisional Application 61/576,439
License status
Available for license
Direct Link:http://neu.technologypublisher.com/technology/12112
Northeastern University is a private national research university located in Boston, Massachusetts. Northeastern is a leader in worldwide experiential learning, urban engagement, and interdisciplinary research that meets global and societal needs. The University offers a comprehensive range of undergraduate and graduate programs leading to degrees through the doctorate in nine colleges and schools. Areas of technology research and development range across the Life Sciences and Material Sciences.
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