RAMOT at Tel Aviv University Ltd.

Logic element based on Electrically Formed Nanowire (EFN) device

Posted by RAMOT at Tel Aviv University Ltd.Responsive · Knowhow and Research output · Israel

Summary of the technology

Logic element based on Electrically Formed Nanowire (EFN) device
Project ID : 11-2013-734

Description of the technology

An electrostatically formed nanowire transistor, includes a source, a drain, and multiple gates surrounding a doped silicon region. The gates include a top gate, a bottom gate, and side gates. The gates induce a channel in said doped silicon region. The channel has a width which is decreased by negative biasing of the side gates, and a height and vertical position controlled by the top and bottom gates.

Additional information can be provided upon request.

Project manager

Oren Calfon
VP Business Development, ICT

Project researchers

Yossi Rosenwaks
T.A.U Tel Aviv University, Engineering
School of Electrical Engineering

Related keywords

  • Electronics, Microelectronics
  • Electronic circuits, components and equipment
  • Micro- and Nanotechnology
  • Electronic Components
  • Some other electronics related
  • Micro- and Nanotechnology related to Biological sciences
  • Electronics and Electro-Optics
  • Advanced Circuits
  • Nanotechnology

About RAMOT at Tel Aviv University Ltd.

Technology Transfer Office from Israel

Ramot is Tel Aviv University's (TAU) technology transfer company and its liaison to industry, bringing promising scientific discoveries made at

Send your request

By clicking "Send your request" you are signing up and accepting our Terms of Service and Privacy policy

Technology Offers on Innoget are directly posted and managed by its members as well as evaluation of requests for information. Innoget is the trusted open innovation and science network aimed at directly connect industry needs with professionals online.