This work introduces a dual-mode phototransistor with an integrated driving circuit designed for high dynamic range and low noise. The device incorporates a quantum well (QW), asymmetric base doping, an energy barrier, a buffer layer, an indium tin oxide (ITO) layer, and a gain-boosting gate. The proposed design uniquely combines a SiGe quantum well, a Si₃N₄ energy barrier, and ITO gate control in a dual-mode CMOS-compatible architecture. This integration enables a low-noise broadband response. It also improves photogain uniformity compared to prior phototransistors. Together, these features enhance photogain, suppress noise, and improve charge separation across a broad spectral range (0.4–1.55 µm). Simulations demonstrate extended carrier lifetime and reduced recombination, yielding a photogain of 500–2000 without avalanche multiplication. The device switches between two operational modes: (i) phototransistor mode, which offers high gain under low-light conditions, and (ii) linear PIN mode, which provides high linearity in bright conditions. The device achieves approximately 80 % quantum efficiency in linear PIN mode and ≈ 131 dB dynamic range in phototransistor mode. CMOS compatibility makes it attractive for imaging and quantum sensing across visible to telecom infrared wavelengths, with potential for further material-level optimization.
Intellectual property status
Provisional patent
Current development status
Scheduled to present at the SPIE Image + Sensing Conference
Desired business relationship
Joint ventures
Technology development
NyxSense™ is an innovation-driven technology company specializing in next-generation low-light detection and imaging sensors. Our mission is to push the boundaries of optical sensing by delivering devices with unprecedented sensitivity, dynamic range, and noise suppression, enabling new possibilities in scientific, industrial, and consumer applications.
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