High sensitivity detection system for measuring Terahertz frequencies

BACKGROUND

Current state-of-the-art terahertz detectors often rely on superconducting transition edge sensors to achieve impressive NEP (noise-equivalent-power) performance but are restricted to a narrow operational temperature bandwidth requiring extremely low temperatures to maintain their sensitivity. This limitation, coupled with low electrical sensitivity limits their practical applications especially in areas where a broader temperature range and higher flexibility is needed.

This invention leverages a material with exceptional electronic and thermal properties to deliver outstanding responsivity and a comparable low NEP, enabling high performance terahertz detection across a wider temperature range. Its scalable design allows for integration of multiple units, expanding its application in fields such as imaging, spectroscopy and molecular spintronics.

Benefit

• Covers a wide range of temperatures to detect weak signals accurately
• Imaging for patients using terahertz detection, an efficient non-invasive alternative to traditional solutions
• Higher performance than traditional devices in the market – increased responsiveness to detect terahertz radiation

Market Application

• Highly effective for analyzing single molecule magnets due to its sensitivity to terahertz radiation, allowing detection of small shifts in current-voltage characteristics, making it ideal for studying magnetic materials.
• Capable of detecting high-frequency electron spin resonance that conventional devices cannot, useful in chemical research for studying new molecules and material properties.
• Applicable in medical imaging and diagnostics without harmful radiation exposure, with potential uses in medical devices.
• Offers enhanced sensitivity and responsiveness for high-performance applications, suitable for renewable energy, security systems, communication, and environmental science (detecting trace gases).

Publications

• El Fatimy, A., Nath, A., Kong, B.D., Boyd, A.K., Myers-Ward, R.L., Daniels, K.M., Jadidi, M.M., Murphy, T.E., Gaskill, D.K. and Barbara, P., 2018. Ultra-broadband photodetectors based on epitaxial graphene quantum dots.Nanophotonics
  ,7(4), pp.735-740.

Gaskill, D.K., Jernigan, G., Campbell, P., Tedesco, J.L., Culbertson, J., VanMil, B., Myers-Ward, R.L., Eddy, C., Moon, J., Curtis, D. and Hu, M., 2009. Epitaxial graphene growth on SiC wafers.ECS Transactions,19(5), p.117.

Intellectual property status

Granted Patent

Patent number : Patent No. 11,029,213

Where : USA