Summary of the technology
The present invention is related to a superficial emitter of electrons which emits electrons from a micrometric Graphene arrangement over silicon carbide. The emitter consists in a plurality of SiC barriers which are highly close and similar and which axes are parallel there between, formed by self-alignment with an equidistant separation. The operation of the device at low voltage is useful for obtaining an efficient emission, which results from the quantic mechanical tunneling between the barriers of the electrons injected from the cathode contact.
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