Technology Offer

Logic element based on Electrically Formed Nanowire (EFN) device

Summary of the technology

Logic element based on Electrically Formed Nanowire (EFN) device
Project ID : 11-2013-734

Details of the Technology Offer

An electrostatically formed nanowire transistor, includes a source, a drain, and multiple gates surrounding a doped silicon region. The gates include a top gate, a bottom gate, and side gates. The gates induce a channel in said doped silicon region. The channel has a width which is decreased by negative biasing of the side gates, and a height and vertical position controlled by the top and bottom gates.

Additional information can be provided upon request.

Project manager

Oren Calfon
VP Business Development, ICT

Project researchers

Yossi Rosenwaks
T.A.U Tel Aviv University, Engineering
School of Electrical Engineering

Related Keywords

  • Electronics, Microelectronics
  • Electronic circuits, components and equipment
  • Micro- and Nanotechnology
  • Electronic Components
  • Some other electronics related
  • Micro- and Nanotechnology related to Biological sciences
  • Electronics and Electro-Optics
  • Advanced Circuits
  • Nanotechnology

About RAMOT at Tel Aviv University Ltd.

RAMOT at Tel Aviv University Ltd.

RAMOT at Tel Aviv University Ltd.

Technology Transfer Office from Israel

Ramot is Tel Aviv University's (TAU) technology transfer company and its liaison to industry, bringing promising scientific discoveries made at the university to industry's attention. The company provides the legal and commercial frameworks for inventions made by TAU faculty, students and researchers, protecting discoveries with patents and working jointly with industry to bring scientific innovations to the market.

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